advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 100v single drive requirement r ds(on) 80m rohs compliant & halogen-free i d 23a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range operating junction temperature range -55 to 150 linear derating factor 0.77 pulsed drain current 1 80 total power dissipation 96 continuous drain current, v gs @ 10v 23 continuous drain current, v gs @ 10v 14.6 drain-source voltage 100 gate-source voltage + 20 a p25n10gh/j-hf parameter rating 200906163 halogen-free product 1 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 3 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. g d s the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap25n10gj) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 100 - - v b ? , ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =16a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =16a, v gs =0v - 90 - ns q rr reverse recovery charge di/dt=100a/s - 380 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap25n10gh/j-hf 2
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap25n10gh/j-hf 0 10 20 30 40 50 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9 .0v 8 .0v 7.0v v g = 5 .0v 0 10 20 30 40 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 9 .0v 8 .0v 7.0v v g = 5 .0v 50 70 90 110 130 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =16a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.3 0.7 1.1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap25n10gh/j-hf q v g 10v q gs q gd q g charge 1 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =64v v ds =80v v ds = 100 v i d =16a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 5 10 15 20 25 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =25 o c v ds =5v t j =150 o c
|
